Within the semiconductor and nanotechnology research community, one of the main capabilities sought is the capacity to quickly, non-destructively, and quantitatively analyze the composition of trace level dopants and nanostructures. Modern 3D finFET transistors, which are non-planar and generally use single-digit nanometer high-K dielectric insulators in place of SiO2 gate oxides, are an example of the technological advancements in electronics and materials that have created the necessity for this kind of learning.
In the ever-evolving landscape of scientific exploration, Cryo-Electron Microscopy (Cryo-EM) stands as a beacon of innovation, offering unprecedented insights into the intricate world of molecular structures. By preserving specimens in their native state at cryogenic temperatures, Cryo-EM transcends traditional limitations, enabling researchers to visualize biomolecules with exquisite detail and fidelity.
While both techniques aim to elucidate molecular structures and identify chemical compositions, they operate on distinct principles, each with its own set of strengths and limitations. In this article, we delve into the comparative analysis of FTIR and Raman Spectroscopy, aiding scientists and researchers in making informed choices for their analytical needs.