Ultra-Flat SiNx Coated Substrates

Ultra-Flat SiNx Coated Substrates
The Ultra-Flat SiNx Substrates consist of ultra-flat silicon wafers coated with 200nm of amorphous nonstoichiometric ultra-low-stress silicon nitride, similar to our silicon nitride grids. The ultra-flat SiNx substrates are available in 6" wafer and conveniently diced 5 x 5mm, 5 x 7mm, and 10 x 10mm chips. The 6" wafer is shipped in a 6" wafer carrier; the diced pieces are shipped in a Gel-Pak® Box.

The wafers are stealth diced, a special clean dicing process that produces debris-free substrates. All products are packed in class 10 clean room conditions.

Properties for thermal SiNx substrates:

Material: CZ Virgin Silicon
Wafer Grade: Prime
Diameter: 150mm
Orientation: <100>
Type/Dopant: P/Boron
Resistivity: 10-20 Ohm-cm
Thickness: 675 +/- 25µm
TTV: ≤2µm
Site Flatness: ≤1µm
Warp: ≤30µm
Bow: ≤20µm
Front Surface: Polished
Back Surface: Etched
Flat: 1 per SEMI Standard
2000A +/- 100A SiNx


21630-6 - 200nm SiNx on Ultra-Flat Silicon Wafer, in 6" wafer carrier
21630-55 - 200nm SiNx on Ultra-Flat Silicon Wafer, 5 x 5mm pieces in a Gel-Pak® box
21630-57 - 200nm SiNx on Ultra-Flat Silicon Wafer, 5 x 7mm pieces in a Gel-Pak® box
21630-510 - 200nm SiNx on Ultra-Flat Silicon Wafer, 10 x 10mm pieces in a Gel-Pak® box